• 61.46.Hk;
  • 61.72.uf;
  • 73.50.Lw;
  • 81.07.Bc;
  • 81.40.Ef


Nanocrystalline boron and phosphorus doped silicon particles were produced in a microwave reactor, collected, and dispersed in ethanol. Pulsed laser annealing of spin-coated films of these particles resulted in p- and n-type conductive layers on flexible substrates if a threshold laser energy density of 60 mJ/cm2 was exceeded. The thermopower of the laser sintered layers exhibits a distinct maximum at a doping concen- tration around 1019 cm–3 for both boron and phosphorus doping with an absolute value of the Seebeck coefficient of about 300 µV/K. Since the thermal conductivity of the layers is reduced by nearly the same factor compared to bulk crystalline silicon as the electrical conductivity, these results are promising for the application of such nanocrystalline layers in thin film thermoelectric devices. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)