Growth characteristics of chloride-based SiC epitaxial growth

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Abstract

In this study some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors and by using the single molecule precursor methyltrichlorosilane (MTS). The efficiency of the process for different precursors, the growth rate stability and the effect that the C/Si and Cl/Si ratios have on the growth are studied. It is found that MTS is the most efficient precursor and that the growth becomes carbon limited at C/Si < 1. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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