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Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

Authors

  • G. E. Cirlin,

    1. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St.-Petersburg, Russia
    2. Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St.-Petersburg, Russia
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  • V. G. Dubrovskii,

    1. St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021 St.-Petersburg, Russia
    2. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St.-Petersburg, Russia
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  • I. P. Soshnikov,

    1. St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021 St.-Petersburg, Russia
    2. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St.-Petersburg, Russia
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  • N. V. Sibirev,

    1. St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021 St.-Petersburg, Russia
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  • Yu. B. Samsonenko,

    1. St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021 St.-Petersburg, Russia
    2. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St.-Petersburg, Russia
    3. Institute for Analytical Instrumentation RAS, Rizhsky 26, 190103 St.-Petersburg, Russia
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  • A. D. Bouravleuv,

    1. St.-Petersburg Physics and Technology Centre for Research and Education RAS, Khlopina 8/3, 194021 St.-Petersburg, Russia
    2. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St.-Petersburg, Russia
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  • J. C. Harmand,

    1. CNRS-LPN, Route de Nozay, 91460 Marcoussis, France
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  • F. Glas

    1. CNRS-LPN, Route de Nozay, 91460 Marcoussis, France
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Abstract

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au-assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation-free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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