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Keywords:

  • III−V semiconductors;
  • LED;
  • internal quantum efficiency;
  • electronic properties;
  • device modeling

Abstract

A model is suggested accounting for effects of localized electron and hole states formed by composition fluctuations in the InGaN active region of a III-nitride LED on non-radiative carrier recombination at threading dislocations. The model enables explanation of the abnormal temperature dependence of internal quantum efficiency (IQE) of a green LED structure recently observed at low current densities. The theoretical predictions are in quantitative agreement with experiment in the temperature range between 200 K and 453 K. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)