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First evidence of resistive switching in polycrystalline GaV4S8 thin layers

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Abstract

Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). Here we report on the first synthesis of thin layers (thicknesses in the 100 to 1000 nm range) of GaV4S8 by RF magnetron sputtering process. Energy dispersive spectroscopy, X-ray diffraction and TEM analyses attest the high quality of polycrystalline GaV4S8 thin layers. Electrical measurements demonstrate that deposited GaV4S8 thin films exhibit a non-volatile reversible resistive switching at room temperature with writing/erasing times of ∼10 µs and a memory window (RhighRlow)/ Rlow > 33%. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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