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Thin film bilayers of multiferroic bismuth ferrite on Pt–Si substrate

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Abstract

A multiferroics/multiferroics BiFeO3/Bi0.90La0.10Fe0.90Zn0.10O3 (BFO/BLFZO) bilayer was deposited on Pt/TiO2/SiO2/Si substrates by radio frequency sputtering. The BLFZO layer strongly affects the phase purity, orientation growth, and leakage current of BFO layer. The bilayered capacitor exhibits a high dielectric permittivity of ∼162 and an improved magnetic behavior of 2Ms ∼ 34.6 emu/cm3, together with an excellent fatigue endurance. A remanent polarization of 2Pr ∼ 116.2 μC/cm2 for the bilayered capacitor is better than those of reported BFO bilayers. The impedance study indicates that lower freely mobile charges are responsible for the improved electrical behavior of the BFO/BLFZO bilayer. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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