Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment



The effects of H-plasma treatment on the electroluminescence (EL) of ZnO-based light-emitting diodes have been investigated systematically. After H-plasma treatment, the EL intensity of the n-ZnO/AlN/p-GaN device is observed to be three times stronger than its as-grown counterpart under the same injection current, and the threshold voltage of the device is significantly reduced simultaneously. The increases in electron concentration and mobility of the ZnO layer resulting from the incorporation of hydrogen atoms into ZnO are considered to be responsible for the improved performance of the ZnO-based light-emitting diodes. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)