Intensity-dependent ultrafast dynamics of injection currents in unbiased GaAs quantum wells

Authors

  • Michał Pochwała,

    1. Department Physik and Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
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  • Huynh Thanh Duc,

    1. Department Physik and Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
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  • Jens Förstner,

    1. Department Physik and Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
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  • Torsten Meier

    Corresponding author
    1. Department Physik and Center for Optoelectronics and Photonics Paderborn (CeOPP), Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
    • Phone: +49-5251-602336, Fax: +49-5251-603435
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Abstract

The intensity dependence of optically-induced injection currents in unbiased GaAs semiconductor quantum wells grown in [110] direction is investigated theoretically for a number of well widths. Our microscopic analysis is based on a 14 × 14 band k · p method in combination with the multisubband semiconductor Bloch equations. An oscillatory dependence of the injection current transients as function of intensity and time is predicted and explained. It is demonstrated that optical excitations involving different subbands and Rabi flopping are responsible for this complex dynamics. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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