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Keywords:

  • atomic layer deposition;
  • plasma-enhanced deposition;
  • patterning;
  • alumina

Abstract

An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in-line process by making use of switched localized plasma sources. It was observed that the sharpness of the patterns is primarily influenced by the concentration of reactive plasma species and by the dimensions of the plasma source. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)