Wide band gap and p-type conductive Cu–Nb–O films

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Abstract

Cu–Nb–O films with a thickness of ca. 150 nm were prepared on borosilicate glass substrates using CuNbO3 ceramic target at substrate temperature of 500 °C by pulsed laser deposition. The X-ray diffraction patterns showed that the Cu–Nb–O films were amorphous or an aggregation of fine crystals. The post-annealed film at 300 °C in N2 gas showed 80% transmission in visible light (band gap = 2.6 eV) and high p-type conductivity of 21 S cm–1. The Cu–Nb–O film with a thickness of 100 nm, fabricated from the target with a composition of Cu/Nb = 0.9, showed the highest p-type conductivity of 116 S cm–1. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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