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Demonstration of diamond field effect transistors by AlN/diamond heterostructure

Authors

  • Masataka Imura,

    Corresponding author
    1. International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
    • International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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  • Ryoma Hayakawa,

    1. International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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  • Eiichiro Watanabe,

    1. Nanotechnology Innovation Center, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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  • Meiyong Liao,

    1. Sensor Materials Center, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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  • Yasuo Koide,

    1. Nanotechnology Innovation Center, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
    2. Sensor Materials Center, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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  • Hiroshi Amano

    1. Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan
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Abstract

This is the first report on an AlN/diamond heterojunction field effect transistor (HFET). The AlN epilayer is grown on oxygen-terminated (111) diamond substrates using metalorganic vapor phase epitaxy at a temperature as high as 1240 °C. The transistor and gate capacitance–voltage characteristics indicate that the HFET behaves as a p-channel FET with a normally-on depletion mode. The HFET channel is located at the AlN/diamond interface, and holes are accumulated in diamond close to the interface. The development of the AlN/diamond HFET creates a new possibility for diamond-based power electronics. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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