Monitoring of the growth of microcrystalline silicon by plasma-enhanced chemical vapor deposition using in-situ Raman spectroscopy

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Abstract

Raman spectra of microcrystalline silicon layers have been recorded in-situ during growth. The spectra have been collected under realistic conditions for solar cell deposition. To enable these measurements an electrode with an optical feed through has been developed. By using a metallic grid to shield the feed through it is possible to achieve homogeneous deposition of µc-Si:H at a sufficient optical transmission. In-situ Raman measurements were carried out during the deposition of a layer with an intentionally introduced gradient in crystallinity that was seen in-situ as well in reference measurements performed on the same layer ex-situ. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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