Rapid Research Letter
Monitoring of the growth of microcrystalline silicon by plasma-enhanced chemical vapor deposition using in-situ Raman spectroscopy
Article first published online: 1 MAR 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Volume 5, Issue 4, pages 144–146, April 2011
How to Cite
Muthmann, S., Köhler, F., Meier, M., Hülsbeck, M., Carius, R. and Gordijn, A. (2011), Monitoring of the growth of microcrystalline silicon by plasma-enhanced chemical vapor deposition using in-situ Raman spectroscopy. Phys. Status Solidi RRL, 5: 144–146. doi: 10.1002/pssr.201105041
- Issue published online: 12 APR 2011
- Article first published online: 1 MAR 2011
- Manuscript Revised: 23 FEB 2011
- Manuscript Accepted: 23 FEB 2011
- Manuscript Received: 20 JAN 2011
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