Rapid Research Letter
A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon
Article first published online: 4 JUL 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Volume 5, Issue 8, pages 277–279, August 2011
How to Cite
Chen, J., Cornagliotti, E., Simoen, E., Hieckmann, E., Weber, J. and Poortmans, J. (2011), A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon. Phys. Status Solidi RRL, 5: 277–279. doi: 10.1002/pssr.201105225
- Issue published online: 3 AUG 2011
- Article first published online: 4 JUL 2011
- Manuscript Accepted: 30 JUN 2011
- Manuscript Revised: 5 JUN 2011
- Manuscript Received: 6 MAY 2011
- Alexander von Humboldt Foundation
- European Regional Development Fund
- Free State of Saxony. Grant Number: SAB. 14255/2423
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