Rapid Research Letter
Electronic structure of EuO spin filter tunnel contacts directly on silicon
Version of Record online: 12 OCT 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Special Issue: Focus on Spintronics and Spin Physics
Volume 5, Issue 12, pages 441–443, December 2011
How to Cite
Caspers, C., Müller, M., Gray, A. X., Kaiser, A. M., Gloskovskii, A., Fadley, C. S., Drube, W. and Schneider, C. M. (2011), Electronic structure of EuO spin filter tunnel contacts directly on silicon. Phys. Status Solidi RRL, 5: 441–443. doi: 10.1002/pssr.201105403
- Issue online: 16 NOV 2011
- Version of Record online: 12 OCT 2011
- Manuscript Accepted: 7 OCT 2011
- Manuscript Revised: 6 OCT 2011
- Manuscript Received: 15 AUG 2011
- DFG. Grant Number: MU 3160/1-1
- BMBF. Grant Numbers: 813405-8 WW3, 05K10CHB
- magnetic materials;
- X-ray photoemission spectra;
- spin injection;
We present an electronic structure study of a magnetic oxide/ semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices.
A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO “spin filter” tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices.
Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface.
(© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)