In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

Authors


Abstract

We have investigated the effect of trimethyl aluminum (TMA) and water (H2O) half-cycle treatments on HF-treated, and O3-oxidized GaN surfaces at 300 °C. The in-situ X-ray photoelectron spectroscopy results indicate no significant re-growth of Ga–O–N or self-cleaning on HF-treated and O3-oxidized GaN substrates with exposure to water and TMA. This result is different from the self-cleaning effect of Ga2O3 seen on sulfur-treated GaAs or InGaAs substrates. O3 causes aggressive oxidation of GaN substrate and direct O–N bonding compared to H2O. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ancillary