Rapid Research Letter

Carrier storage in Ge nanoparticles produced by pulsed laser deposition

  1. J. Martín-Sánchez1,2,
  2. A. Chahboun1,3,
  3. M. J. M. Gomes1,
  4. A. G. Rolo1,
  5. B. Pivac4,
  6. I. Capan4,*

Article first published online: 12 APR 2012

DOI: 10.1002/pssr.201206104

Issue

physica status solidi (RRL) - Rapid Research Letters

physica status solidi (RRL) - Rapid Research Letters

Volume 6, Issue 5, pages 223–225, May 2012

Additional Information

How to Cite

Martín-Sánchez, J., Chahboun, A., Gomes, M. J. M., Rolo, A. G., Pivac, B. and Capan, I. (2012), Carrier storage in Ge nanoparticles produced by pulsed laser deposition. Phys. Status Solidi RRL, 6: 223–225. doi: 10.1002/pssr.201206104

Author Information

  1. 1

    University of Minho, Centre of Physics and Physics Department, Braga 4710-057, Portugal

  2. 2

    Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid, Spain

  3. 3

    FST, Physics Department, BP 416, Tanger, Morocco

  4. 4

    Rudjer Boskovic Institute, Bijenička 54, 10 000 Zagreb, Croatia

*Rudjer Boskovic Institute, Bijenička 54, 10 000 Zagreb, Croatia

Publication History

  1. Issue published online: 8 MAY 2012
  2. Article first published online: 12 APR 2012
  3. Manuscript Accepted: 11 APR 2012
  4. Manuscript Revised: 29 MAR 2012
  5. Manuscript Received: 12 MAR 2012

Funded by

  • COMPETE program
  • FCT project. Grant Number: PTDC/FIS/70194/2006
  • Cooperation program (FCT-CNRST)-2010/2012. Grant Number: Ref. 441.00
  • COST MP0901-NanoTP Action
  • FCT grant. Grant Number: SFRH/BPD/64850/2009

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

View Full Article (HTML) Get PDF (528K)

Keywords:

  • germanium;
  • nanoparticles;
  • pulsed laser deposition;
  • charge trapping

Abstract

In this work, we report on the electrical characterization of Ge nanoparticles (NPs) produced by pulsed laser deposition (PLD) at room temperature (RT) in Ar gas inert atmosphere using a shadowed off-axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between thin alumina films can be obtained on p-type Si(100) substrates following a low temperature and short rapid thermal annealing (RTA) treatment. Metal–oxide–semiconductor (MOS) structures with and without Ge NPs embedded in the alumina were prepared for the electrical measurements. The results indicate a strong memory effect at relatively low programming voltages (±4 V) due to the presence of Ge NPs. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

View Full Article (HTML) Get PDF (528K)