Rapid Research Letter
The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy
Version of Record online: 5 OCT 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Volume 6, Issue 11, pages 445–447, November 2012
How to Cite
Moon, P., Lee, J. D., Ha, S. K., Lee, E. H., Choi, W. J., Song, J. D., Kim, J. S. and Dang, L. S. (2012), The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy. Phys. Status Solidi RRL, 6: 445–447. doi: 10.1002/pssr.201206369
- Issue online: 13 NOV 2012
- Version of Record online: 5 OCT 2012
- Manuscript Accepted: 2 OCT 2012
- Manuscript Revised: 27 SEP 2012
- Manuscript Received: 31 AUG 2012
- Special Coordination Funds for Promoting Science and Technology from MEXT, Japan
- KISTI Supercomputing Center through the strategic support program for the supercomputing application research. Grant Number: KSC2009S010009
- KIST institutional program
- Converging Research Center Program through the MEST. Grant Number: 2012K001280
- DAPA, ADD, and GRL program
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