A facile method for flexible GaN-based light-emitting diodes



Flexible GaN-based light-emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated. The process uses commercial LEDs on patterned sapphire substrates, laser lift-off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free-standing LLO-LEDs mounted on the flexible PET substrates were characterized. The process is scalable to large wafer diameters. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)