Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications



We propose a selector-less Pr0.7Ca0.3MnO3 (PCMO) based resistive-switching RAM (RRAM) for high-density cross-point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φeff), i.e., self-formed Schottky barrier. In addition, a scalable 4F2 selector-less cross-point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high-density memory applications. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)