Rapid Research Letter
Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications
Article first published online: 15 OCT 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Volume 6, Issue 11, pages 454–456, November 2012
How to Cite
Park, S., Jung, S., Siddik, M., Jo, M., Park, J., Kim, S., Lee, W., Shin, J., Lee, D., Choi, G., Woo, J., Cha, E., Lee, B. H. and Hwang, H. (2012), Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications. Phys. Status Solidi RRL, 6: 454–456. doi: 10.1002/pssr.201206382
- Issue published online: 13 NOV 2012
- Article first published online: 15 OCT 2012
- Manuscript Revised: 8 OCT 2012
- Manuscript Accepted: 8 OCT 2012
- Manuscript Received: 11 SEP 2012
- National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST). Grant Number: 2011-0018646
Options for accessing this content:
- If you would like institutional access to this content, please recommend the title to your librarian.
- Login via other institutional login options http://onlinelibrary.wiley.com/login-options.
- You can purchase online access to this Article for a 24-hour period (price varies by title)
- New Users: Please register, then proceed to purchase the article.
Registered Users please login:
- Access your saved publications, articles and searches
- Manage your email alerts, orders and subscriptions
- Change your contact information, including your password
Please register to:
- Save publications, articles and searches
- Get email alerts
- Get all the benefits mentioned below!