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Keywords:

  • WORM;
  • ZnO;
  • contacts;
  • MBE

Abstract

Thumbnail image of graphical abstract

Write-once–read-many-times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.

(© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)