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The effect of top contact on ZnO write-once–read-many-times memory

Authors

  • Jing Qi,

    Corresponding author
    1. The Key Laboratory for Magnetism and Magnetic Materials of MOE, Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P.R. China
    • Phone: +86 1391 976 2894, Fax: +86 931 891 3554
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  • Qing Zhang,

    1. Quantum Structures Laboratory, Department of Electrical Engineering, University of California, Riverside, CA 92521, USA
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  • Jianlin Liu

    Corresponding author
    1. Quantum Structures Laboratory, Department of Electrical Engineering, University of California, Riverside, CA 92521, USA
    • Phone: 001 951 827 7131, Fax: 001 951 827 2425
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Abstract

Write-once–read-many-times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.

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(© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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