Get access

Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Authors

  • Helin Cao,

    Corresponding author
    1. Department of Physics, Purdue University, 525 Northwestern Ave., West Lafayette, IN 47907, USA
    2. Birck Nanotechnology Center, Purdue University, 1205 W. State St., West Lafayette, IN 47907, USA
    • Phone: +01 765 496 3059, Fax: +01 765 494 0706
    Search for more papers by this author
  • Suyang Xu,

    1. Joseph Henry Laboratories, Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, USA
    2. Princeton Institute for Science and Technology of Materials, Princeton University, 70 Prospect Ave., Princeton, NJ 08544, USA
    Search for more papers by this author
  • Ireneusz Miotkowski,

    1. Department of Physics, Purdue University, 525 Northwestern Ave., West Lafayette, IN 47907, USA
    Search for more papers by this author
  • Jifa Tian,

    1. Department of Physics, Purdue University, 525 Northwestern Ave., West Lafayette, IN 47907, USA
    2. Birck Nanotechnology Center, Purdue University, 1205 W. State St., West Lafayette, IN 47907, USA
    Search for more papers by this author
  • Deepak Pandey,

    1. Department of Physics, Purdue University, 525 Northwestern Ave., West Lafayette, IN 47907, USA
    2. Birck Nanotechnology Center, Purdue University, 1205 W. State St., West Lafayette, IN 47907, USA
    Search for more papers by this author
  • M. Zahid Hasan,

    1. Joseph Henry Laboratories, Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544, USA
    2. Princeton Institute for Science and Technology of Materials, Princeton University, 70 Prospect Ave., Princeton, NJ 08544, USA
    Search for more papers by this author
  • Yong P. Chen

    Corresponding author
    1. Department of Physics, Purdue University, 525 Northwestern Ave., West Lafayette, IN 47907, USA
    2. Birck Nanotechnology Center, Purdue University, 1205 W. State St., West Lafayette, IN 47907, USA
    3. School of Electrical and Computer Engineering, Purdue University, 465 Northwestern Ave., West Lafayette, IN 47907 USA
    • Phone: +01 765 494 0947, Fax: +01 765 494 0706
    Search for more papers by this author

Abstract

original image

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly re- vealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Ancillary