Rapid Research Letter
Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals
Article first published online: 6 DEC 2012
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Special Issue: Topological Insulators – From Materials Design to Reality (Eds.: Claudia Felser, Shoucheng Zhang, Binghai Yan)
Volume 7, Issue 1-2, pages 133–135, February 2013
How to Cite
Cao, H., Xu, S., Miotkowski, I., Tian, J., Pandey, D., Hasan, M. Z. and Chen, Y. P. (2013), Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals. Phys. Status Solidi RRL, 7: 133–135. doi: 10.1002/pssr.201206457
- Issue published online: 12 FEB 2013
- Article first published online: 6 DEC 2012
- Manuscript Accepted: 26 NOV 2012
- Manuscript Revised: 23 NOV 2012
- Manuscript Received: 23 OCT 2012
- DARPA MESO program. Grant Number: N66001-11-1-4107
- Office of Basic Energy Sciences, U.S. Department of Energy. Grant Numbers: DE-FG-02-05ER46200, AC03-76SF00098
- Lawrence Berkeley National Laboratory (LBNL) and A. P. Sloan Foundation
- Advanced Light Source in the LBNL
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