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Keywords:

  • AlGaN;
  • quantum wells;
  • photoluminescence;
  • lifetime

Abstract

Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP-MOCVD have been studied by means of deep ultraviolet time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV-AlGaN/AlGaN MQWs PL emission (Ep) exhibits a similarly anti-S-shaped behavior (blueshift – accelerated redshift – decelerated redshift): Ep increases in the temperature range of 5.9–20 K and decreases for 20–300 K, involving an accelerated redshift for 20–150 K and an opposite decelerated redshift for 150–300 K with temperature increase. Especially at high temperature as 300 K, the slope of the Ep redshift tends towards zero. This temperature-induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)