Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature



In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a large Ion/Ioff ratio of 1.7 × 106. The low operation voltage, small sub-threshold swing and high mobility could be ascribed to the combination of high-κ TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics.

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