• core−shell nanowires;
  • p−n junctions;
  • electronic properties;
  • delta-doping


Thumbnail image of graphical abstract

The properties of the core–shell p–n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson–Schrödinger equations in cylindrical coordinates and the effective mass approximation for doping levels between 1017–1019 cm–3 and radii ≤100 nm at 300 K. Only electrons or holes are confined in the n- or p-type core for equal core–shell thicknesses and doping levels but the shell is depleted even when a flat-band condition exists at the surface for equal core–shell volumes. In contrast, a δ-doped n–i–n–i–p–i junction has a balanced charge distribution and flat-band potential in the core and shell which is critical for the realization of high performance nanowire devices. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)