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Properties and tailoring of the ubiquitous core–shell p–n junction in semiconductor nanowires by δ-doping

Authors

  • Matthew Zervos

    1. Nanotechnology Research Centre and Department of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, Kalipoleos 75, Nicosia 1678, Cyprus
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    • Phone: +00357 22894509, Fax: +00357 22892254


Abstract

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The properties of the core–shell p–n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson–Schrödinger equations in cylindrical coordinates and the effective mass approximation for doping levels between 1017–1019 cm–3 and radii ≤100 nm at 300 K. Only electrons or holes are confined in the n- or p-type core for equal core–shell thicknesses and doping levels but the shell is depleted even when a flat-band condition exists at the surface for equal core–shell volumes. In contrast, a δ-doped n–i–n–i–p–i junction has a balanced charge distribution and flat-band potential in the core and shell which is critical for the realization of high performance nanowire devices. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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