Air stability of PTCDI-C13-based n-OFETs on polymer interfacial layers

Authors

  • Jeongkyun Roh,

    1. Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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  • Jaemin Lee,

    1. Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea
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  • Chan-mo Kang,

    1. Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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  • Changhee Lee,

    Corresponding author
    1. Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
    • Phone: +82 2 880 9559, Fax: +82 2 880 6451
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  • Byung J. Jung

    Corresponding author
    1. Department of Materials Science and Engineering, The University of Seoul, Dongdaemun-gu, Seoul 130-743, Korea
    • Phone: +82 2 6490 2412, Fax: +82 2 6490 2402
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Abstract

This Letter reports the novel use of poly(9-vinylcarbazole) (PVK) as a dielectric interfacial layer for n-type organic field-effect transistors (n-OFETs). With PVK, both the air stability and electron mobility of N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs were improved. Among the PVKs with different weight-average molecular weight (Mw), PVK with high Mw showed good performance. The high glass transition temperature of PVK enabled thermal post annealing of the active layer, which resulted in a high electron mobility of 0.61 cm2/Vs. This mobility was maintained at 90% and 59% after 4 days and 105 days in air, respectively. The PVK interfacial layer reduced the trapped charges in the PTCDI-C13-based n-OFET for air-exposure and caused a decrease in the threshold voltage shift.

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(© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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