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Keywords:

  • nanowires;
  • doping;
  • surface passivation;
  • III−V semiconductors;
  • GaAs;
  • carrier mobility

Abstract

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The resistivity and mobility of carbon-doped GaAs nanowires have been studied for different doping concentrations. Surface effects have been evaluated by comparing unpassivated with passivated nanowires. We directly see the influence of the surface: the pinning of the Fermi level and the consequent existence of a depletion region lead to an increase of the mobility up to 30 cm2/Vs for doping concentrations lower than 3 × 1018 cm–3. Electron beam induced current measurements show that the minority carrier diffusion path can be as high as 190 nm for passivated nanowires.

(© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)