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Keywords:

  • InAs nanowires;
  • substrate preparation;
  • hydrogen peroxide;
  • Ga predeposition;
  • MBE

Abstract

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The growth of self-catalyzed InAs nanowires on Si(111) substrates via vapour–solid (VS) and vapour–liquid–solid (VLS) growth mechanisms is investigated using molecular beam epitaxy. For both mechanisms, the substrate preparation plays a crucial role. In this context, the required thin oxide layer for the VS growth of the nanowires is obtained by treating the HF-cleaned Si substrate with hydrogen peroxide. For the VLS growth, Ga is predeposited on the unprocessed Si substrate. The Ga forms droplets, which etch the native oxide and create the necessary pinholes.

(© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)