Cu particle seeded InP–InAs axial nanowire heterostructures

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Abstract

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We demonstrate the epitaxial growth of alternating InP–InAs nanowire heterostructures using Cu seed particles in MOVPE. We observe extraordinary early stages in the formation of InAs segments, e.g. three-dimensional nucleation instead of step-flow growth. Furthermore, InAs segments of thin nanowires exhibit extended 4H crystal structure.

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Color coded XEDS elemental map of a typical InP–InAs nanowire heterostructure seeded by a Cu particle.

(© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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