We demonstrate the epitaxial growth of alternating InP–InAs nanowire heterostructures using Cu seed particles in MOVPE. We observe extraordinary early stages in the formation of InAs segments, e.g. three-dimensional nucleation instead of step-flow growth. Furthermore, InAs segments of thin nanowires exhibit extended 4H crystal structure.
Color coded XEDS elemental map of a typical InP–InAs nanowire heterostructure seeded by a Cu particle.
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