• III-nitride semiconductors;
  • compound semiconductors;
  • nanowires;
  • Raman spectroscopy;
  • X-ray diffraction;
  • EDX


Thumbnail image of graphical abstract

The radial alloy distribution of Inx Ga1–xN nanowires grown by plasma-assisted molecular beam epitaxy has been investigated by three different techniques with nanometric spatial resolution and capability to study single nanowires. Energy-dispersive X-ray spectroscopy radial line-scans revealed a gradient in the alloy composition of individual nanowires. Resonant Raman scattering and spatially resolved X-ray diffraction showed the existence of three distinctive regions with different alloy composition. The combination of the three techniques provides robust evidence of the spontaneous formation of a core–shell structure with a thin Ga-richer shell wrapping an In-rich core at the bottom part of the nanowires. This composition-modulated nanostructure offers an attractive way to explore new device concepts in fully epitaxial nanowire-based solar cells. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)