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Keywords:

  • nanowires;
  • X-ray diffraction;
  • GaAs;
  • crystal structure

Abstract

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We study by X-ray nanodiffraction the statistical distribution of the two possible twinned zinc-blende (ZB) orientations as well as the occurrence of the wurtzite structure within single GaAs nanowires (NWs) grown by molecular beam epitaxy on Si(111). A fast scanning scheme allowed to perform diffraction experiments on 160 individual NWs. We find that although on average the two ZB orientations show a similar abundance, in 90% of all NWs one ZB orientation dominates and little twinning is observed within each individual NW. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)