A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer

Authors

  • Karine Hestroffer,

    1. CEA-CNRS group “Nanophysique et Semiconducteurs”, Université Joseph Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble, France
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  • Bruno Daudin

    Corresponding author
    1. CEA-CNRS group “Nanophysique et Semiconducteurs”, Université Joseph Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble, France
    • CEA-CNRS group “Nanophysique et Semiconducteurs”, Université Joseph Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble, France

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Abstract

original image

Based on reflection high energy electron diffraction (RHEED) experiments, we show that the nucleation delay of GaN nanowire growth by plasma-assisted molecular beam epitaxy on nitrided Si(111) and on AlN/Si(111) exhibit similar behaviors in function of the substrate temperature and of the Ga flux. On bare Si(111), a finite delay, estimated to be one minute in our system and under our set of growth conditions, is necessary to form and subsequently amorphize crystalline β-Si3N4 before GaN can start to form. Although the amorphization time is found to be independent of the substrate temperature, this process adds a supplemental delay within the overall delay in the growth of GaN nanowires on bare Si(111), compared to growth on AlN/Si(111) or on amorphous silicon nitride on Si(111). (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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