Rapid Research Letter
A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer
Article first published online: 5 JUL 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Special Issue: Focus on Semiconductor Nanowires
Volume 7, Issue 10, pages 835–839, October 2013
How to Cite
Hestroffer, K. and Daudin, B. (2013), A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer. Phys. Status Solidi RRL, 7: 835–839. doi: 10.1002/pssr.201307255
- Issue published online: 16 OCT 2013
- Article first published online: 5 JUL 2013
- Manuscript Accepted: 21 JUN 2013
- Manuscript Revised: 20 JUN 2013
- Manuscript Received: 2 JUN 2013
- ANR39 SINCRON
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