Structural and optical properties of Alx Ga1–xN nanowires

Authors

  • A. Pierret,

    1. CEA-CNRS group “Nanophysique et Semiconducteurs”, Institut Néel/CNRS-Univ. J. Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38 054 Grenoble Cedex, France
    2. Laboratoire d'Etude des Microstructures, ONERA-CNRS, 72, 92322 Châtillon Cedex, France
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  • C. Bougerol,

    1. CEA-CNRS group “Nanophysique et Semiconducteurs”, Institut Néel/CNRS-Univ. J. Fourier and CEA Grenoble, 25 rue des Martyrs, 38 054 Grenoble Cedex, France
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  • M. den Hertog,

    1. Institut Néel, CNRS/UJF UPR2940, 166, 25 rue des Martyrs, 38042 Grenoble cedex 9, France
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  • B. Gayral,

    1. CEA-CNRS group “Nanophysique et Semiconducteurs”, Institut Néel/CNRS-Univ. J. Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38 054 Grenoble Cedex, France
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  • M. Kociak,

    1. Laboratoire de Physique des Solides, CNRS UMR8502, Université Paris-Sud XI, Bâtiment 510, 91405 Orsay, France
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  • H. Renevier,

    1. INP-CNRS – Laboratoire des Matériaux et du Génie Physique, UMR 5628, Minatec, 3 parvis L. Néel, 257, 38016 Grenoble, France
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  • B. Daudin

    Corresponding author
    1. CEA-CNRS group “Nanophysique et Semiconducteurs”, Institut Néel/CNRS-Univ. J. Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38 054 Grenoble Cedex, France
    • CEA-CNRS group “Nanophysique et Semiconducteurs”, Institut Néel/CNRS-Univ. J. Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38 054 Grenoble Cedex, France

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Abstract

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The structural properties of Alx Ga1–xN nanowires with high Al content grown by plasma-assisted molecular beam epitaxy have been studied by high-resolution electron microscopy and X-ray diffraction. Evidence for marked chemical composition fluctuations has been found that have been assigned to kinetical effects during growth. Concomitantly, microphotoluminescence and nanocathodoluminescence experiments on single nanowires have revealed the presence of sharp emission lines, as an evidence of carrier localization. This feature has been assigned to several spatial scales of composition fluctuations, in agreement with the kinetically-driven growth model proposed for Alx Ga1–xN nanowires. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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