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Keywords:

  • nitride semiconductors;
  • nanowires;
  • composition fluctuation;
  • carrier localization;
  • nanocathodoluminescence;
  • molecular beam epitaxy

Abstract

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The structural properties of Alx Ga1–xN nanowires with high Al content grown by plasma-assisted molecular beam epitaxy have been studied by high-resolution electron microscopy and X-ray diffraction. Evidence for marked chemical composition fluctuations has been found that have been assigned to kinetical effects during growth. Concomitantly, microphotoluminescence and nanocathodoluminescence experiments on single nanowires have revealed the presence of sharp emission lines, as an evidence of carrier localization. This feature has been assigned to several spatial scales of composition fluctuations, in agreement with the kinetically-driven growth model proposed for Alx Ga1–xN nanowires. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)