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Keywords:

  • InAs;
  • nanowire FETs;
  • wurtzite;
  • zincblende

Abstract

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We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires grown from identical catalyst particles. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)