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Keywords:

  • GaAs;
  • AlGaAs;
  • core−shell nanowires;
  • photoluminescence;
  • elastic strain;
  • excitons

Abstract

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The core photoluminescence emission of MOVPE-grown GaAs–Al0.33Ga0.67As core–shell nanowires is studied as function of the relevant geometrical parameter of these nanostructures, namely the shell-thickness to core-radius ratio hs/Rc. The energy of the dominant emission peak was compared with values of the GaAs heavy- and light-hole excitons redshifted by a uniaxial tensile strain, the latter calculated assuming perfect coherence at the core/shell interface and elastic energy equilibrium within the nanowires. Good agreement is obtained for hs/Rc < 1, the intrinsic strain-free excitonic emission being identified at 1.510 eV, and further ascribed to bound heavy-hole excitons. For hs/Rc > 1 increasingly larger redshifts (up to ∼9 meV in excess of values calculated based on our elastic strain model) are observed, and tentatively ascribed to shell-dependent exciton localization effects.

Experimental and calculated bound exciton peak energies for GaAs–Al0.33Ga0.67As core–shell nanowires as function of their shell-thickness to core-radius ratio hs/Rc. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)