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Rapid Research Letter
Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs–AlGaAs core–shell nanowires
Article first published online: 16 AUG 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (RRL) - Rapid Research Letters
Special Issue: Focus on Semiconductor Nanowires
Volume 7, Issue 10, pages 874–877, October 2013
How to Cite
Prete, P., Miccoli, I., Marzo, F. and Lovergine, N. (2013), Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs–AlGaAs core–shell nanowires. Phys. Status Solidi RRL, 7: 874–877. doi: 10.1002/pssr.201308046
- Issue published online: 16 OCT 2013
- Article first published online: 16 AUG 2013
- Manuscript Accepted: 12 AUG 2013
- Manuscript Revised: 23 JUL 2013
- Manuscript Received: 28 JUN 2013
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