In this work we demonstrate that, based on a simple and versatile fabrication method, the collective use and integration of high aspect ratio (AR) nanostructures, here Si and ZnO nanowires (NWs), is possible and addresses multiple application fields, including light detection, active materials for bio-sensing devices, or materials with interesting wettability properties. A suitable implementation of the filtration method enables then to design networks composed of semiconducting NWs with AR in the range of 10–400. Even for the lowest AR, the network is coherent. However, good electrical properties and flexibility are obtained only for AR greater than 50.
Si nanowire (SiNW) random networks observed by SEM: Large magnification showing the nanowires and low magnification showing the electrical test structure.
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