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Retention properties with high-temperature resistance in (Bi,Pr)(Fe,Mn)O3 thin film capacitor



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(Bi0.9Pr0.1)(Fe0.97Mn0.03)O3 (BPFM) thin film was deposited on Pt-coated Si(100) substrate by chemical solution deposition. Remnant polarization and coercive field in the BPFM film capacitor were 113 °C/cm2 and 630 kV/cm at the maximum electric field of 1000 kV/cm, respectively. Switching charge measured by a rectangular pulse measurement was 118 °C/cm2. Almost no polarization losses of BPFM film capacitor were observed even after retention time of 104 s at room temperature. Furthermore, the polarization loss at 450 °C was only 3.7% even after 104 s. These results indicate that BPFM film capacitor is suitable for non-volatile memory applications at high temperature. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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