Recent and forthcoming publications in pss: Phys. Status Solidi RRL 4/2013

The role of stacking faults for the formation of shunts during potential-induced degradation of crystalline Si solar cells [Rapid Research Letter]

V. Naumann, D. Lausch, A. Graff, M. Werner, S. Swatek, J. Bauer, A. Hähnel, O. Breitenstein, S. Großer, J. Bagdahn, and C. Hagendorf

In this Letter, shunts caused by potential-induced degradation (PID) of crystalline solar cells are investigated in detail. Electron beam induced current measurements at low acceleration voltage reveal that PID shunts are always correlated with stacking faults in a {111} plane. Secondary ion mass spectroscopy mapping and cross-sectional high-resolution transmission electron microscopy (TEM) with EDX analyses prove that these shunting stacking faults are decorated with sodium. Accordingly, a model for PID-shunting is introduced.

Phys. Status Solidi RRL (2013) DOI 10.1002/pssr.201307090

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Suppression of threshold voltage shifts in organic thin-film transistors with bilayer gate dielectrics [Advanced Materials Physics]

Kenjiro Fukuda, Tatsuya Suzuki, Takuma Kobayashi, Daisuke Kumaki, and Shizuo Tokito

In this study, bias stress effects are investigated in organic thin-film transistor devices with bilayer gate dielectric constructions consisting of two layers possessing opposite bias stress tendencies. These bias stress effects closely correlate with the thickness ratio of the two dielectric layers, such that threshold voltage shifts can be described as a linear function for the capacitive ratio of the two dielectric layers. A new method for almost completely suppressing the bias stress effects and providing long-term operational stability in organic thin-film transistors is also provided.

Phys. Status Solidi A (2013) DOI 10.1002/pssa.201228811

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Mott–Hubbard transition in V2O3 revisited [Feature Article]

P. Hansmann, A. Toschi, G. Sangiovanni, T. Saha-Dasgupta, S. Lupi, M. Marsi, and K. Held

In this Feature Article, Hansmann et al. review recent calculations and experiments which shed a new light on the famous Mott–Hubbard transition in V2O3. Old paradigms, such as the pressure–doping equivalence need to be changed. The picture shows that, on the microscale, “metallic” Cr-doped V2O3 is actually phase separated into metallic islands (red) intermixed with insulating regions (blue).

Phys. Status Solidi B (2013) DOI 10.1002/pssb.201248476

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Improved control of the phosphorous surface concentration during in-line diffusion of c-Si solar cells by APCVD [Rapid Research Letter]

Kristopher O. Davis, Kaiyun Jiang, Carsten Demberger, Heiko Zunft, Helge Haverkamp, Dirk Habermann, and Winston V. Schoenfeld

Using phosphosilicate glass thin films deposited by atmospheric-pressure chemical vapor deposition (APCVD), the authors report on improved control of phosphorus surface concentration for c-Si solar cells formed by in-line diffusion. They demonstrate doping from APCVD films in a high-throughput, dynamic deposition system, offering an alternative to in-line emitter formation via H3PO4 doping, a technology that suffers from high phosphorus surface concentration.

Phys. Status Solidi RRL (2013) DOI 10.1002/pssr.20137020

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Towards indium free optoelectronic devices: Dielectric/metal/dielectric alternative transparent conductive electrode in organic photovoltaic cells [Feature Article]

L. Cattin, J. C. Bernède, and M. Morsli

This Feature Article presents the state-of-the-art concerning the dielectric/metal/dielectric structures and their application as transparent electrodes in organic photovoltaic cells. The properties of these structures depend on the thickness of the different layers. The threshold thickness value of the metal film is around 10 nm, where the structures commute from an insulating to a highly conductive state. The transmittance of the films increases when the metal thickness increases up to the percolation thickness, while a further increase induces a transmittance decrease. Finally, the nature and the thickness of the dielectric layers can be chosen as a function of the device properties requested in organic light-emitting diodes, organic photovoltaic cells, etc.

Phys. Status Solidi A (2013) DOI 10.1002/pssa.201228089

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High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films [Original Paper]

Flora M. Li, Bernhard C. Bayer, Stephan Hofmann, Stuart P. Speakman, Caterina Ducati, William I. Milne, and Andrew J. Flewitt

Part of Disorder in Order: A special issue on amorphous materials honoring S. R. Elliott)

A remote plasma sputtering process (high target utilization sputtering, HiTUS) has been used to deposit amorphous hafnium oxide with a very high dielectric constant (∼30). X-ray diffraction shows that this material has a microstructure in which the atoms have a cubic-like short-range order, whereas radio frequency (rf) magnetron sputtering produced a monoclinic polycrystalline microstructure. This is correlated to the difference in the energetics of remote plasma and rf magnetron sputtering processes.

Phys. Status Solidi B (2013) DOI 10.1002/pssb.201248520

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