Back Cover: CuNi binary alloy catalyst for growth of nitrogen-doped graphene by low pressure chemical vapor deposition (Phys. Status Solidi RRL 10/2016)
Remi Papon, Kamal P. Sharma, Rakesh D. Mahayavanshi, Subash Sharma, Riteshkumar Vishwakarma, Mohamad Saufi Rosmi, Toshio Kawahara, Joseph Cline, Golap Kalita and Masaki Tanemura
Version of Record online: 18 OCT 2016 | DOI: 10.1002/pssr.201670761
Papon et al. (pp. 749–752) have found that substitutional nitrogen-doped (N-doped) bilayer graphene can be effectively grown on the CuNi alloy catalyst. The main challenge in growing N-doped bilayer graphene is the incorporation of atomic nitrogen in the graphene lattice and at the same time controlling the number of layers, due to the dissimilarities in carbon and nitrogen solubilities. A binary alloy catalyst can be the ideal platform to control the solubilities of both nitrogen and carbon atoms, thereby achieving high nitrogen doping as well as controlling the number of layers. The authors have achieved growth of large bilayer domains on the CuNi alloy owing to better coordination of carbon and nitrogen atoms. This finding will lead to a better understanding of binary alloy catalysts for growth of graphene-related structures with incorporation of nitrogen and other heteroatoms.