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physica status solidi (RRL) - Rapid Research Letters

Cover image for Vol. 11 Issue 1

January 2017

Volume 11, Issue 1

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Editorials
    6. Contents
    7. Review@RRL
    8. Rapid Research Letters
    9. Information for authors
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      Cover Picture: Optically anisotropic media: New approaches to the dielectric function, singular axes, microcavity modes and Raman scattering intensities (Phys. Status Solidi RRL 1/2017)

      Marius Grundmann, Chris Sturm, Christian Kranert, Steffen Richter, Rüdiger Schmidt-Grund, Christianne Deparis and Jesús Zúñiga-Pérez

      Version of Record online: 24 JAN 2017 | DOI: 10.1002/pssr.201770301

      Thumbnail image of graphical abstract

      Biaxial optical media in the presence of dissipation (e.g. absorption or photon loss) exhibit exceptional points or singular optic axes. In the Review@RRL by Grundmann et al. (article no. 1600295) this is demonstrated for a bulk oxide (monoclinic Ga2O3) and for anisotropic oxide micro-cavities (layered, inhomogeneous media) which are effectively biaxial. The cover shows the calculated polarization Stokes vector S of a photon mode in an anisotropic, orthorhombic micro-cavity depending on the photonic in-plane momentum. An optically uniaxial cavity medium with positive birefringence is assumed; the optic axis is perpendicular to the mirror growth direction and is aligned vertically in the momentum plot. Color represents the S3 component (circular polarization), arrows the projection of the Stokes vector in the S1S2 plane (linear polarization). The positions of the four exceptional points are marked by the white dots. Background image: Cross-section transmission electron microscopy image of m-plane oriented anisotropic ZnO/(Mg,Zn)O micro-cavity.

  2. Issue Information

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Editorials
    6. Contents
    7. Review@RRL
    8. Rapid Research Letters
    9. Information for authors
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  3. Back Cover

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Editorials
    6. Contents
    7. Review@RRL
    8. Rapid Research Letters
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      Back Cover: Low energy scanning transmission electron beam induced current for nanoscale characterization of p–n junctions (Phys. Status Solidi RRL 1/2017)

      Patrick Peretzki, Benedikt Ifland, Christian Jooss and Michael Seibt

      Version of Record online: 24 JAN 2017 | DOI: 10.1002/pssr.201770303

      Thumbnail image of graphical abstract

      Electron beam induced current (EBIC) has long since been used as a standard method in scanning electron microscopy to investigate charge carrier behaviour in p–n junctions. Pushing it to high spatial resolution, the use of a transmission geometry, i.e. thin lamella samples, is mandatory. Peretzki et al. (article no. 1600358) explore the possibilities of using low electron excitation energy in a wedge shape lamella prepared by the focused ion beam technique. This geometry highlights the influence of the electron beam generation volume on the spatial resolution, which the authors simulate using an established Monte Carlo based method. A silicon p–n junction and a perovskite manganite–titanate p–n heterojunction representing systems with greatly different minority carrier diffusion lengths are investigated in this work. Results show a vanishing EBIC signal below a threshold sample thickness which clearly differs in the two systems. The manganite–titanate junction proves to be better suitable for high resolution studies. Comparing experimental and simulated data, the authors discuss the interplay of surface recombination and ion beam preparation damage in the EBIC signal as the dominant reason for the found thickness behaviour.

  4. Editorials

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    5. Editorials
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    7. Review@RRL
    8. Rapid Research Letters
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  5. Contents

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Editorials
    6. Contents
    7. Review@RRL
    8. Rapid Research Letters
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      Contents: Phys. Status Solidi RRL 1/2017

      Version of Record online: 24 JAN 2017 | DOI: 10.1002/pssr.201770305

  6. Review@RRL

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Editorials
    6. Contents
    7. Review@RRL
    8. Rapid Research Letters
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    1. Anisotropic optical media

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      Optically anisotropic media: New approaches to the dielectric function, singular axes, microcavity modes and Raman scattering intensities

      Marius Grundmann, Chris Sturm, Christian Kranert, Steffen Richter, Rüdiger Schmidt-Grund, Christianne Deparis and Jesús Zúñiga-Pérez

      Version of Record online: 2 NOV 2016 | DOI: 10.1002/pssr.201600295

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      Invited Review@RRL on the occasion of 10th anniversary of pss RRL

      The anisotropic optics (novel theory of Raman scattering off the principal axes) and the singular optics (spectral dispersion of Windungsachsen from generalized ellipsometry) in monoclinic gallia are reviewed. The latter represent exceptional points, a property of complex symmetric matrices, and are predicted to also exist in anisotropic microcavities leading to circularly polarized eigenstates.

  7. Rapid Research Letters

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Editorials
    6. Contents
    7. Review@RRL
    8. Rapid Research Letters
    9. Information for authors
    1. Graphene quantum dots

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      Hexagonal graphene quantum dots

      S. Ghosh and U. Schwingenschlögl

      Version of Record online: 5 DEC 2016 | DOI: 10.1002/pssr.201600226

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      Results of first principles calculations on graphene quantum dots in the form of hexagonal disks and rings of different sizes provide systematic and quantitative insight into the electronic properties. They also enable calibration of effective Hamiltonian and tight binding calculations.

    2. Ferroelectrics

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      Downward self-polarization of lead-free (K0.5Na0.5)(Mn0.005Nb0.995)O3 ferroelectric thin films on Nb:SrTiO3 substrate

      Hae Jin Seog, Chang Won Ahn, Shinuk Cho, Kwang-Eun Kim, Chan-Ho Yang, Tae Yeong Koo, Sun-Young Lee, Jong Pil Kim and Ill Won Kim

      Version of Record online: 31 OCT 2016 | DOI: 10.1002/pssr.201600235

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      Downward self-polarization was observed and studied in (100) preferred-oriented (K0.5Na0.5)(Mn0.005Nb0.995)O3 (KNMN) ferroelectric thin film on Nb:SrTiO3 (Nb:STO) substrate. Compressive strain occurred due to lattice mismatching and a difference in thermal expansion coefficients (TEC) between the film and Nb:STO substrate. The compressive strain gradient may be the main reason for the observed downward self-polarization in the KNMN film on Nb:STO substrate.

    3. Silicon devices

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      Remarkable room-temperature magnetoresistance in silicon strip devices

      Hui Guo, Lei Cui, Yali Li, Qiang Chen, Xiaolong Fan, Fangcong Wang and Junshuai Li

      Version of Record online: 3 NOV 2016 | DOI: 10.1002/pssr.201600253

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      In this paper, the authors report remarkable room-temperature magnetoresistance (MR) ratio up to ∼400% in silicon strip devices. Saturating and non-saturating MRs are realized based on the measuring configurations with one top contact and ten top contacts, respectively. The differences of MR ratio values and change trends in these two measuring configurations are attributed to the enhanced Hall electric field with the increase of the top contact number.

    4. Cathode materials

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      Interrelation between inhomogeneity and cyclability in O3-NaFe1/2Co1/2O2

      Kaoru Amaha, Wataru Kobayashi, Shota Akama, Kazutaka Mitsuishi and Yutaka Moritomo

      Version of Record online: 4 NOV 2016 | DOI: 10.1002/pssr.201600284

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      O3-NaFe1/2Co1/2O2 is a promising candidate of cathode materials for sodium-ion secondary batteries (SIBs). Its battery property, however, strongly depends on the thermal process of the material. The authors found that the slowly-cooled sample shows inhomogeneity of the Fe concentration and lattice constants, even though it keeps the O3-type structure. The inhomogeneity is responsible for the poor cyclability of the slowly-cooled sample.

    5. Silicon surfaces

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      Extremely low surface recombination in 1 Ω cm n-type monocrystalline silicon

      Ruy S. Bonilla, Christian Reichel, Martin Hermle and Peter R. Wilshaw

      Version of Record online: 5 DEC 2016 | DOI: 10.1002/pssr.201600307

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      Minimizing recombination, also known as passivation, has become a major topic of study as more efficient silicon solar cells are required. In this study a triple layer a-Si/SiO/SiNx dielectric coating has been charged extrinsically using corona to demonstrate one of the lowest surface recombination parameters for planar, float zone, n-type, 1 Ωcm silicon: Seff = 0.1 cm/s at Δn = 1015 cm–3, equivalent to a saturation current density J0s = 0.3 fA/cm2, and a 1-sun implied open-circuit voltage of 738 mV.

    6. CIGS nanorods

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      Deposition of quaternary sputtered CIGS nanorods via glancing angle deposition

      Matthew Brozak, Hilal Cansizoglu and Tansel Karabacak

      Version of Record online: 8 NOV 2016 | DOI: 10.1002/pssr.201600326

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      The first experimental results of quaternary sputtered CuInxGa1–xSe2 (CIGS) vertically aligned nanorods are presented. This was achieved by glancing angle deposition (GLAD) and is a self-assembling nanostructured array. Measurements show that the optical absorption of the nanorods is increased over their thin film counterpart indicating enhanced diffuse light scattering characteristics.

    7. Nanometric diamond

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      Nanometric diamond delta doping with boron

      James E. Butler, Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, Valerii Chernov, Sergey Bogdanov, Mikail Drozdov, Evgeniy Demidov, Ekaterina Surovegina, Vladimir Shashkin, Albert Davidov, Haiyan Tan, Louisa Meshi, Alexander C. Pakpour-Tabrizi, Marie-Laure Hicks and Richard B. Jackman

      Version of Record online: 7 DEC 2016 | DOI: 10.1002/pssr.201600329

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      At room temperature, a high mobility two-dimensional charge conduction layer is formed adjacent to a heavily boron doped, nanometer thick boron doped layer in high quality diamond.

    8. THz quantum cascade lasers

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      Potential-inserted quantum well design for quantum cascade terahertz lasers

      R. Benchamekh, J.-M. Jancu and P. Voisin

      Version of Record online: 29 NOV 2016 | DOI: 10.1002/pssr.201600334

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      The design of terahertz quantum cascade laser (QCL) operating at room temperature is a major challenge in device physics. In this work a new double quantum well (QW) terahertz QCL design is presented: a single QW active region and a single QW injector/collector. The electronic states in the active region are engineered through single InAs monolayer insertion to obtain a three level system where the upper and lower transition energies are respectively smaller and larger than the longitudinal optical phonon energy.

    9. InSb infrared detectors

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      Correcting lateral photon scattering in an InSb infrared detector

      Felix Frühauf, Jan Bauer and Otwin Breitenstein

      Version of Record online: 29 NOV 2016 | DOI: 10.1002/pssr.201600346

      Thumbnail image of graphical abstract

      It was checked whether lock-in thermography (LIT) images show the same optical blurring effect due to light scattering in the detector as luminescence images of Si solar cells show. Image (a) shows an as-measured LIT image and (b) shows the same image after deconvolution. The insert shows that the deconvolution increases only the sharpness of some line defects (arrow). The appearance of extended defects (circle) remains unchanged.

    10. Nanoscale characterization

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      Low energy scanning transmission electron beam induced current for nanoscale characterization of p–n junctions

      Patrick Peretzki, Benedikt Ifland, Christian Jooss and Michael Seibt

      Version of Record online: 29 NOV 2016 | DOI: 10.1002/pssr.201600358

      Thumbnail image of graphical abstract

      When electron beam induced current is to be measured in high spatial resolution electron microscopy, the length scales of the involved processes play an important role. The authors use low electron energies to compare two systems with greatly different charge carrier diffusion lengths and cover the full range between transmitting and non-transmitting electrons. Results are governed by the interplay between surface recombination and ion beam preparation damage.

    11. Silicon nanocrystals

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      Atom probe tomography of size-controlled phosphorus doped silicon nanocrystals

      Keita Nomoto, Daniel Hiller, Sebastian Gutsch, Anna V. Ceguerra, Andrew Breen, Margit Zacharias, Gavin Conibeer, Ivan Perez-Wurfl and Simon P. Ringer

      Version of Record online: 29 NOV 2016 | DOI: 10.1002/pssr.201600376

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      In this study, a systematic atom probe tomography analysis of the phosphorus distribution and incorporation in size-controlled silicon nanocrystals embedded in silicon dioxide is presented. The quantitative determination of the amount of P-atoms ffects on the optical and electronic properties of Si nanoper quantum dot enables a systematic understanding of P-induced evolumes.

  8. Information for authors

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Editorials
    6. Contents
    7. Review@RRL
    8. Rapid Research Letters
    9. Information for authors
    1. You have free access to this content

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