Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium (pages 19–21)
Mihaela Popovici, Johan Swerts, Kazuyuki Tomida, Dunja Radisic, Min-Soo Kim, Ben Kaczer, Olivier Richard, Hugo Bender, Annelies Delabie, Alain Moussa, Christa Vrancken, Karl Opsomer, Alexis Franquet, Malgorzata A. Pawlak, Marc Schaekers, Laith Altimime, Sven Van Elshocht and Jorge A. Kittl
Version of Record online: 18 NOV 2010 | DOI: 10.1002/pssr.201004462
Compared to anatase, rutile TiO2 leads to superior electrical properties both in terms of equivalent oxide thickness and leakage current. It is shown that O3 is needed during atomic layer deposition to obtain rutile TiO2, but leads to etching of the underlaying Ru. In this Letter, the authors demonstrate how the use of a H2O based TiO2 interlayer can be applied to deposit rutile TiO2 uniformly over 300 mm RuO2/Ru/TiN/Si substrates.