physica status solidi (RRL) - Rapid Research Letters

Cover image for Vol. 5 Issue 2

February 2011

Volume 5, Issue 2

Pages A23–A32, 47–88

  1. Cover Picture

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
    9. Information for authors
    1. Cover Picture: The source of room temperature ferromagnetism in granular GaMnAs layers with zinc blende clusters (Phys. Status Solidi RRL 2/2011)

      K. Lawniczak-Jablonska, J. Libera, A. Wolska, M. T. Klepka, P. Dluzewski, J. Sadowski, D. Wasik, A. Twardowski, A. Kwiatkowski and K. Sato

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssr.201190003

      Thumbnail image of graphical abstract

      The cover picture of this issue is related to the article by Lawniczak-Jablonska et al. (pp. 62–64). The figure shows experimental evidences for cubic cluster formation in the MBE grown GaMnAs layer after thermal processing at 600 °C. No large hexagonal MnAs clusters were detected in HRTEM and EXAFS studies. Each Mn atom has only four As near-neighbors and 12 Ga second neighbors (one Mn cannot be excluded), therefore, GaMnAs nanoclusters were created with Mn content much higher than ever reported for the layers. This ruled out the possibility of cubic MnAs cluster formation. Nevertheless, the material is ferromagnetic at room temperature as was evidenced by SQUID measurements. Performed Monte Carlo simulations of the Curie temperature indicate that Mn content close to 20% is sufficient to increase TC to 300 K.

  2. Issue Information

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
    9. Information for authors
    1. Issue Information: Phys. Status Solidi RRL 2/2011

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssr.201190004

  3. Back Cover

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    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
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    1. Back Cover: Observation of mechanical fracture and corresponding domain structure changes of polycrystalline PbTiO3 nanotubes (Phys. Status Solidi RRL 2/2011)

      Hyunwoo Choi, Seungbum Hong, Yunseok Kim, Myungjun Kim, Tae-Hyun Sung, Hyunjung Shin and Kwangsoo No

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssr.201190005

      Thumbnail image of graphical abstract

      One-dimensional ferroelectric nanomaterials have attracted attention due to excellent properties compared to their bulk thin film counter parts. In the Letter featured on the back cover, Hyunwoo Choi et al. (pp. 59–61) have investigated the mechanical fractures and corresponding domain structure changes of polycrystalline PbTiO3 nanotubes. The cover image shows the changes of morphology and domain structures of PbTiO3 nanotubes after mechanical fracture. The authors found that nanotubes synthesized above 400 °C clearly showed a ferroelectric PbTiO3 phase and the nanotubes synthesized above 500 °C underwent mechanical fracture. After the mechanical fracture, the average size of both grains and domains increased and the average aspect ratio decreased.

  4. Contents

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
    9. Information for authors
    1. Contents: Phys. Status Solidi RRL 2/2011 (pages A23–A27)

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssr.201150307

  5. NEW IN pss

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
    9. Information for authors
  6. Conference calendar

    1. Top of page
    2. Cover Picture
    3. Issue Information
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    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
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    1. Conference calendar: Phys. Status Solidi RRL 2/2011 (page A30)

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssr.201150309

  7. Rapid Research Letters

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
    9. Information for authors
    1. 6 MHz BAW resonators fabricated using new piezoelectric crystals PrCa4O(BO3)3 and NdCa4O(BO3)3 (pages 47–49)

      Fapeng Yu, Shujun Zhang, Xian Zhao, Duorong Yuan, Qing-ming Wang and Thomas R. Shrout

      Article first published online: 17 DEC 2010 | DOI: 10.1002/pssr.201004505

      Thumbnail image of graphical abstract

      This Letter reports on the variation of resonance frequency of bulk acoustic wave (BAW) resonators in the temperature range –140 to 200 °C. The first and second order TCF parameters (temperature coefficient of frequency) were found to be Tf(1) = 0 ppm/K, Tf(2) = –40 ppb/K2 for (YXt)–1.5° cut PrCOB and Tf(1) = 0 ppm/K, Tf(2)= –12 ppb/K2 for (YXt)15° cut NdCOB. These values are comparable to AT-cut quartz crystals, demonstrating PrCOB and NdCOB crystals promising for sensing applications with expanded temperature usage range.

    2. Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopy (pages 50–52)

      Justinas Palisaitis, Ching-Lien Hsiao, Muhammad Junaid, Mengyao Xie, Vanya Darakchieva, Jean-Francois Carlin, Nicolas Grandjean, Jens Birch, Lars Hultman and Per O. Å. Persson

      Article first published online: 22 DEC 2010 | DOI: 10.1002/pssr.201004407

      Thumbnail image of graphical abstract

      In this Letter, the use of low-loss EELS (electron energy loss spectroscopy) is demonstrated as a powerful tool for compositional determination. The authors utilize the full compositional range in AlxIn1–xN to show a linear variation with x of the plasmon energy. The method is proposed as a tool for nanoscale compositional investigations.

    3. First evidence of resistive switching in polycrystalline GaV4S8 thin layers (pages 53–55)

      Emeline Souchier, Laurent Cario, Benoit Corraze, Philippe Moreau, Pascale Mazoyer, Claude Estournès, Richard Retoux, Etienne Janod and Marie-Paule Besland

      Article first published online: 29 DEC 2010 | DOI: 10.1002/pssr.201004392

      Thumbnail image of graphical abstract

      This Letter reports on thin layers of GaV4S8 deposited by RF magnetron sputtering. The thin films (100–1000 μm) exhibit an electric pulse induced reversible resistive switching (RS) at 300 K: with writing/erasing times of ∼10 μs and switching ratio of >33%, in some cases even up to 200–300%. Using this original RS may be interesting for further RRAM (resistive RAM) applications.

    4. Finite size effects in ZnO nanoparticles: An electron paramagnetic resonance (EPR) analysis (pages 56–58)

      Peter Jakes and Emre Erdem

      Article first published online: 7 JAN 2011 | DOI: 10.1002/pssr.201004450

      Thumbnail image of graphical abstract

      By the aid of electron paramagnetic resonance (EPR) spectroscopy the authors of this Letter observed strong quantum size effects for ultra-fine ZnO nanoparticles synthesized by the co-precipitation method. The results strongly verify the core–shell structure of the nanoparticles. 50 nm sized particles revealed EPR signals both from surface (g ∼ 2.0) and core (g ∼ 1.96) defects whereas extreme small particles (4 nm) revealed only a signal from the surface defects.

    5. Observation of mechanical fracture and corresponding domain structure changes of polycrystalline PbTiO3 nanotubes (pages 59–61)

      Hyunwoo Choi, Seungbum Hong, Yunseok Kim, Myungjun Kim, Tae-Hyun Sung, Hyunjung Shin and Kwangsoo No

      Article first published online: 22 DEC 2010 | DOI: 10.1002/pssr.201004495

      Thumbnail image of graphical abstract

      The authors investigated the mechanical fractures and corresponding domain structure changes of polycrystalline PbTiO3 nanotubes. Nanotubes synthesized above 400 °C clearly showed ferroelectric phase and those synthesized above 500 °C underwent mechanical fracture. After the fracture, average size and aspect ratio of both grains and domains were changed. These results provide a novel processing route for ferroelectric PbTiO3 nanotubes with a temperature window between 400 °C and 480 °C.

    6. The source of room temperature ferromagnetism in granular GaMnAs layers with zinc blende clusters (pages 62–64)

      K. Lawniczak-Jablonska, J. Libera, A. Wolska, M. T. Klepka, P. Dluzewski, J. Sadowski, D. Wasik, A. Twardowski, A. Kwiatkowski and K. Sato

      Article first published online: 22 DEC 2010 | DOI: 10.1002/pssr.201004503

      Thumbnail image of graphical abstract

      The authors report new data on the cubic clusters formed in the MBE grown GaMnAs layer after thermal processing at 500 and 600 °C. Applying EXAFS technique they proved that in such clusters no hypothetic MnAs cubic structure was formed – but GaMnAs solid solutions with the content of Mn close to 20%, and this is sufficient to have ferromagnetic-like properties at room temperature.

    7. Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN (pages 65–67)

      L. Ardaravicˇius, J. Liberis, O. Kiprijanovicˇ, A. Matulionis, M. Wu and H. Morkoç

      Article first published online: 23 DEC 2010 | DOI: 10.1002/pssr.201004502

      Thumbnail image of graphical abstract

      The frequency of operation of heterostructure field effect transistors (HFETs) is primarily determined by electron transport in a two-dimensional electron gas (2DEG) subjected to a high electric field. This Letter reports on the first demonstration of the electric-field-tuned drift-velocity resonance for gateless AlInN/AlN/GaN 2DEG channels deduced from experimental study of hot-electron transport. The resonance position correlates with that for the fastest decay of hot phonons determined from independent experiments.

    8. Thin tantalum films on crystalline silicon – a metallic glass (pages 68–70)

      Kevin Stella, Damian Bürstel, Eckart Hasselbrink and Detlef Diesing

      Article first published online: 29 DEC 2010 | DOI: 10.1002/pssr.201004510

      Thumbnail image of graphical abstract

      Amorphous tantalum films on silicon exhibit an extraordinary high resistivity value and a high negative temperature coefficient of the resistivity (TCR) for low sample temperatures. The combination of both is located on the extrapolation of Mooij's plot. Thus, the formation of metallic glassy tantalum on silicon is possible under ultra high vacuum conditions. The photo shows an e-beam evaporator under operation producing thin amorphous tantalum films. The brightness difference between the melting tantalum droplet and the housing of the evaporator has been made visible by a special photographic technique with 17 different layers of sensitivity.

    9. ZnO nanorods–polymer hybrid white light emitting diode grown on a disposable paper substrate (pages 71–73)

      G. Amin, S. Zaman, A. Zainelabdin, O. Nur and M. Willander

      Article first published online: 29 DEC 2010 | DOI: 10.1002/pssr.201004446

      Thumbnail image of graphical abstract

      Using a hybrid junction between ZnO nanorods (NRs) and a poly(9,9-dioctylfluorene) (PFO) p-type polymer, large area white light emitting diodes (LEDs) were realized on disposable paper. The emitted electroluminence (EL) spectrum was covering the range between 420 nm and up to 780 nm combining the emissions from the ZnO and the PFO.

    10. Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment (pages 74–76)

      S. G. Zhang, X. W. Zhang, J. X. Wang, J. B. You, Z. G. Yin, J. J. Dong, B. Cui, A. M. Wowchak, A. M. Dabiran and P. P. Chow

      Article first published online: 29 DEC 2010 | DOI: 10.1002/pssr.201004497

      Thumbnail image of graphical abstract

      In this Letter, the improvement of the electroluminescence (EL) performance of ZnO-based light-emitting diodes (LEDs) via H-plasma treatment is demonstrated. After H-plasma treatment, the EL intensity of the n-ZnO/AlN/p-GaN device is observed to be three times stronger than its as-grown counterpart under the same injection current, and the threshold voltage of the device is significantly reduced simultaneously.

    11. Direct-current nanogenerator based on ZnO nanotube arrays (pages 77–79)

      Y. Xi, D. H. Lien, R. S. Yang, C. Xu and C. G. Hu

      Article first published online: 7 JAN 2011 | DOI: 10.1002/pssr.201004466

      Thumbnail image of graphical abstract

      The authors demonstrate a direct-current nanogenerator based on ZnO nanotube arrays driven by an ultrasonic wave. Due to the special structure of the nanotubes, the different potential from piezoelectricity can be naturally divided by the hollow of the tube when the nanotube is bent or deformed. Both the bent/deformed inner and outer wall can form a steady voltage/current.

    12. Lateral IBIC characterization of single crystal synthetic diamond detectors (pages 80–82)

      Alessandro Lo Giudice, Paolo Olivero, Claudio Manfredotti, Marco Marinelli, Enrico Milani, Federico Picollo, Giuseppe Prestopino, Alessandro Re, Valentino Rigato, Claudio Verona, Gianluca Verona-Rinati and Ettore Vittone

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssr.201004488

      Thumbnail image of graphical abstract

      This Letter reports about the characterization of a homoepitaxial CVD diamond detector with Ion Beam Induced Charge (IBIC) microscopy in lateral geometry. 100% charge collection efficiency is measured from the active region of the device, while the technique allows a direct mapping with micrometric resolution of the charge collection efficiency profile at different bias voltages from the frontal Schottky electrode to the back ohmic contact, effectively elucidating the roles of drift and diffusion processes in the mechanisms that lead to the formation of the signal.

    13. Thin film bilayers of multiferroic bismuth ferrite on Pt–Si substrate (pages 83–85)

      Jiagang Wu, John Wang, Dingquan Xiao and Jianguo Zhu

      Article first published online: 10 JAN 2011 | DOI: 10.1002/pssr.201004473

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      A Bi1.15FeO3 (BFO15)/Bi1.10La0.10Fe0.90Zn0.10O3 (BLFZO) bilayered capacitor was prepared which exhibits improved magnetic behavior together with an excellent fatigue endurance. The remanent polarization of 2Pr ∼ 116.2 μC/cm2 for the bilayered capacitor is larger than those of previously reported BFO bilayers.

    14. Effect of III-nitride polarization on VOC in p–i–n and MQW solar cells (pages 86–88)

      Gon Namkoong, Patrick Boland, Si-Young Bae, Jae-Phil Shim, Dong-Seon Lee, Seong-Ran Jeon, Kurniawan Foe, Kevin Latimer and W. Alan Doolittle

      Article first published online: 12 JAN 2011 | DOI: 10.1002/pssr.201004512

      Thumbnail image of graphical abstract

      This Letter reports the study of the effect of spontaneous and piezoelectric polarizations of nitride based p–i(InGaN)–n and InGaN/GaN MQW solar cells upon the open circuit voltage (VOC). The authors found that a strong modification of spontaneous polarization and band offset values in p–i(InGaN)–n solar cells with increased indium composition adversely modifies the energy band structures and corresponding electric fields resulting in a conspicuous reduction of VOC. In contrast, piezoelectric polarization dominant in InGaN/GaN MQW solar cells does not have a large influence upon VOC.

  8. Information for authors

    1. Top of page
    2. Cover Picture
    3. Issue Information
    4. Back Cover
    5. Contents
    6. NEW IN pss
    7. Conference calendar
    8. Rapid Research Letters
    9. Information for authors
    1. Information for authors: Phys. Status Solidi RRL 2/2011 (pages A31–A32)

      Article first published online: 31 JAN 2011 | DOI: 10.1002/pssr.201150310

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