physica status solidi (RRL) - Rapid Research Letters

Cover image for physica status solidi (RRL) - Rapid Research Letters

March 2011

Volume 5, Issue 3

Pages A33–A42, 89–130

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    1. Cover Picture: Observation of insulating–insulating monoclinic structural transition in macro-sized VO2 single crystals (Phys. Status Solidi RRL 3/2011)

      Bongjin Simon Mun, Kai Chen, Youngchul Leem, Catherine Dejoie, Nobumichi Tamura, Martin Kunz, Zhi Liu, Michael E. Grass, Changwoo Park, Joonseok Yoon, Y. Yvette Lee and Honglyoul Ju

      Article first published online: 1 MAR 2011 | DOI: 10.1002/pssr.201190006

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      To clarify the origin of metal–insulator transition (MIT) in VO2, it is of crucial importance to under-stand the interplay among monoclinic M1, monoclinic M2, and rutile R phases. The Letter by Bongjin Simon Mun et al. (pp. 107–109) reports the unusual insula-tor–insulator structural phase transition (SPT) of VO2 single crystals, which involves monoclinic M1 and M2 phase. The VO2 crystals exhibit an extremely abrupt MIT at 67.8 °C and an insulator–insulator transition (IIT) at ∼49 °C. Using synchrotron-based X-ray microdiffraction, it is found that the IIT in this VO2 crystal is related to a SPT between the M2 and M1 phases while the MIT occurs with a SPT of M1 and R phase. Also, a stable M2 phase is found at room temperature without any presence of external stress, which has not been reported previously. The authors believe that further investigations on this intriguing system will not only enrich the fundamental understanding of the system, but also will be exploited in future technologies.

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    1. Issue Information: Phys. Status Solidi RRL 3/2011

      Article first published online: 1 MAR 2011 | DOI: 10.1002/pssr.201190007

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    1. Contents: Phys. Status Solidi RRL 3/2011 (pages A33–A37)

      Article first published online: 1 MAR 2011 | DOI: 10.1002/pssr.201150311

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  5. Conference calendar

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    1. Conference calendar: Phys. Status Solidi RRL 3/2011 (page A40)

      Article first published online: 1 MAR 2011 | DOI: 10.1002/pssr.201150313

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    1. Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films (pages 89–91)

      Kuyyadi P. Biju, Xinjun Liu, Seonghyun Kim, Seungjae Jung, Jubong Park and Hyunsang Hwang

      Article first published online: 19 JAN 2011 | DOI: 10.1002/pssr.201004455

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      This Letter reports the coexistence of a filamentary and a homogeneous type of resistive switching in Pt/graded WOx/W devices. Two stable switching modes with opposite switching polarity and different electrical characteristics and memory performance are found to coexist in the same memory cell. Reversible effects between the two modes hint towards a possible modulation of the switching type in Pt/WOx/W devices.

    2. Improved photocatalytic performance of rutile TiO2 (pages 92–94)

      Maria K. Nowotny and Detlef W. Bahnemann

      Article first published online: 19 JAN 2011 | DOI: 10.1002/pssr.201004511

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      This Letter reports on the enhanced photocatalytic performance of undoped rutile TiO2 achieved by homogeneously coupling differently processed rutile TiO2 powders. Specifically, the couple consisted of a strongly reduced (SR) and a strongly oxidised (SO) TiO2 powder processed at 1273 K in a controlled oxygen atmosphere of p (O2) = 10–10 Pa and p (O2) = 75 kPa, respectively. The model compound methylene blue (MB) was used to monitor the photocatalytic performance of the powders. The observed improvement was further enhanced by the addition of Fe2+ redox mediator.

    3. Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe (pages 95–97)

      J. Segura-Ruiz, G. Martinez-Criado, J. A. Sans, R. Tucoulou, P. Cloetens, I. Snigireva, C. Denker, J. Malindretos, A. Rizzi, M. Gomez-Gomez, N. Garro and A. Cantarero

      Article first published online: 17 JAN 2011 | DOI: 10.1002/pssr.201004527

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      Using synchrotron radiation nanoprobe the authors have studied the elemental distribution in single InxGa1–xN nanowires. Both Ga and In maps revealed an inhomogeneous axial distribution inside single nanowires. The analysis of different nanowires suggests a decrease of In segregation with reduction of the nanowire diameter. Photoluminescence and Raman scattering measurements on ensembles of nanowires showed relevant signatures of the compositional disorder.

    4. Phase transformation mechanism of In–Sb–Te through the boundary reaction between InSb and InTe (pages 98–100)

      Yong Tae Kim, Eun Tae Kim, Chung Soo Kim and Jeong Yong Lee

      Article first published online: 19 JAN 2011 | DOI: 10.1002/pssr.201004515

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      In this Letter, the authors report phase transformation mechanism of In–Sb–Te chalcogenide material for the multi-level phase change memory. At the crystallization temperature, the In3Sb1Te2 phase is formed at the coherent boundary with the InTe side first and grown into the InSb side gradually. This result is explained by the atomic rearrangement model where the small lattice distortion allows the formation of In3Sb1Te2 phase at the strained boundary region.

    5. Fabrication of 6,13-bis(triisopropyl-silylethynyl)–pentacene thin-film transistors with the silver ink transfer method using a polymer stamp (pages 101–103)

      Tae-Yeon Oh, Nam-Su Kang, Ki-Young Dong, Seongpil Chang, Jung-Ho Park, Shin-Woo Jung, Seung-Jun Lee and Byeong-Kwon Ju

      Article first published online: 27 JAN 2011 | DOI: 10.1002/pssr.201004487

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      In this Letter, the authors report on the fabrication of TIPS–pentacene thin-film transistors (TFTs) using the Ag ink transfer method, which is a more rapid and cheap process than the Au metal transfer method because it does not require a vacuum equipment. The TIPS–pentacene TFTs with the self-assembled monolayer (SAM) treated Ag ink electrode show better electrical properties compared to a device with evaporated Au electrodes.

    6. New template based nanoelectrode arrays for organic/inorganic photovoltaic applications (pages 104–106)

      Diefeng Gu, Helmut Baumgart and Gon Namkoong

      Article first published online: 20 JAN 2011 | DOI: 10.1002/pssr.201004548

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      In this Letter the authors report a new nanofabrication technology to yield highly arrayed nanoelectrodes based on porous templates. This new process technology can significantly increase the space usage of porous templates. In addition, this novel nanofabrication technology allows for the optimal control of 3D parameters such as thickness, spacing, and height of nanoelectrodes, leading to maximum occupancy of organic photoactive materials between the nanoelectrodes. It provides a promising outlook for higher efficiency of hybrid organic–inorganic solar cells.

    7. Observation of insulating–insulating monoclinic structural transition in macro-sized VO2 single crystals (pages 107–109)

      Bongjin Simon Mun, Kai Chen, Youngchul Leem, Catherine Dejoie, Nobumichi Tamura, Martin Kunz, Zhi Liu, Michael E. Grass, Changwoo Park, Joonseok Yoon, Y. Yvette Lee and Honglyoul Ju

      Article first published online: 21 JAN 2011 | DOI: 10.1002/pssr.201105011

      Thumbnail image of graphical abstract

      This Letter reports first observation of M1, M2, and R phases in VO2 single crystals exhibiting two transitions: an insulator–insulator transition (IIT) at ∼49 °C and the well-known first-order metal–insulator transition (MIT) at 67.8 °C with transition width ∼0.01 °C. We believe that further investigations on this intriguing system will not only enrich the fundamental understanding of the system, but will also be exploited in future technologies.

    8. Quantum confinement in germanium nanocrystal thin films (pages 110–112)

      Zachary C. Holman and Uwe R. Kortshagen

      Article first published online: 2 FEB 2011 | DOI: 10.1002/pssr.201105031

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      In this Letter, the optical band gaps of dense films of germanium nanocrystals were determined from absorption spectra. By decreasing the constituent nanocrystal size from 9 nm to below 5 nm, the film band gap can be controllably tuned from 0.73 to over 1.0 eV. These values are comparable to those reported for isolated, non-interacting germanium nanocrystals, indicating that device-relevant films can be deposited without loss of quantum confinement.

    9. Colloidal Cu2ZnSnS4 nanocrystals generated by a facile route using ethylxanthate molecular precursors (pages 113–115)

      Yufeng Liu, Meiying Ge, Yang Yue, Yan Sun, Yizheng Wu, Xin Chen and Ning Dai

      Article first published online: 3 FEB 2011 | DOI: 10.1002/pssr.201004528

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      This Letter reports on the use of zinc ethylxanthate (Zn(ex)2) and copper ethylxanthate (Cu(ex)2) for preparing quaternary Cu2ZnSnS4 (CZTS) colloidal nanocrystals. As air-stable molecular precursors, Zn(ex)2 and Cu(ex)2 can optimize the synthesis of quaternary CZTS nanocrystals because Cu(ex)2) and Zn(ex)2 support the formation of homogeneous precursor solutions including all precursors, and thus the flexible production of CZTS nanocrystals in homogeneous reaction solutions.

    10. Field-induced ion transfer for deposition on pointed tips and field emission (pages 116–118)

      Wal Jun Kim, Seung Min Lee and Yong Hyup Kim

      Article first published online: 7 FEB 2011 | DOI: 10.1002/pssr.201105004

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      The authors introduce a fabrication technique for locally depositing a film only on a pointed tip by field-induced ion evaporation in ambient atmosphere. This technique is utilized to deposit a metal on a sharp tungsten tip by transferring metal ions dissolved in electrolyte solution onto the tungsten tip without resorting to any photolithographic process.

    11. Intensity-dependent ultrafast dynamics of injection currents in unbiased GaAs quantum wells (pages 119–121)

      Michał Pochwała, Huynh Thanh Duc, Jens Förstner and Torsten Meier

      Article first published online: 11 FEB 2011 | DOI: 10.1002/pssr.201004529

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      In solid state systems of sufficiently low symmetry optical excitation can be used to generate electrical currents without an applied bias. Here, the authors theoretically study the intensity dependence of such injection currents generated by femtosecond laser pulses in GaAs semiconductor quantum wells grown in [110] direction. It is predicted that the direction of the injection current changes as function of the laser pulse intensity.

    12. Correlation effects in the electronic and structural properties of Cr2AlC (pages 122–124)

      M. Ramzan, S. Lebègue and R. Ahuja

      Article first published online: 10 FEB 2011 | DOI: 10.1002/pssr.201004508

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      In this Letter, density functional theory is used to study the structural, electronic and mechanical properties of the well known MAX phase material Cr2AlC. Due to correlation effects among Cr-3d states, only a Hubbard corrected functional is able to reproduce the experimental equilibrium structural parameters of this compound, which is found to be a ferromagnet.

    13. Demonstration of diamond field effect transistors by AlN/diamond heterostructure (pages 125–127)

      Masataka Imura, Ryoma Hayakawa, Eiichiro Watanabe, Meiyong Liao, Yasuo Koide and Hiroshi Amano

      Article first published online: 15 FEB 2011 | DOI: 10.1002/pssr.201105024

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      This Letter reports on the first demonstration of a diamond field effect transistor (FET) using an AlN and diamond heterojunction structure. The FET behaves as a p-channel FET with a normally on depletion mode. The transistor properties of the current device indicate that the FET may progress to a thermally stable, high-frequency, and high-power switching device.

    14. Photoinduced C70 radical anions in polymer:fullerene blends (pages 128–130)

      Andreas Sperlich, Moritz Liedtke, Julia Kern, Hannes Kraus, Carsten Deibel, Salvatore Filippone, Juan Luis Delgado, Nazario Martín and Vladimir Dyakonov

      Article first published online: 10 FEB 2011 | DOI: 10.1002/pssr.201105030

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      Photo-induced electron transfer from a conjugated polymer to fullerene results in the formation of positive and negative polarons. In most cases, only the positive polaron on a polymer chain could be detected. In this Letter the authors identify the negative polaron on a set of C70 fullerenes and dimers related bulk-heterojunctions via the NIR absorption band at 0.92 eV.

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