Epitaxial phase-change materials (pages 415–417)
Peter Rodenbach, Raffaella Calarco, Karthick Perumal, Ferhat Katmis, Michael Hanke, André Proessdorf, Wolfgang Braun, Alessandro Giussani, Achim Trampert, Henning Riechert, Paul Fons and Alexander V. Kolobov
Article first published online: 22 OCT 2012 | DOI: 10.1002/pssr.201206387
Rodenbach, Calarco and co-workers report the successful epitaxial growth of the phase-change material Ge2Sb2Te5 (GST) on GaSb(001), GaSb(111), and Si(111) using molecular beam epitaxy. The structural properties are investigated by reflection high energy electron diffraction, synchrotron X-ray diffraction and transmission electron microscopy. The films exhibit a superior quality if grown on (111) surfaces, independent of the lattice mismatch. This is attributed to the tendency of this material to form layered structures as well as to the nature of distortion in the metastable cubic phase.